TSM80N1R2CH C5G
TSM80N1R2CH C5G
Part Number TSM80N1R2CH C5G
Description MOSFET N-CH 800V 5.5A TO251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
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TSM80N1R2CH C5G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM80N1R2
Standard Package 1875
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 685pF @ 100V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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